Introduction of allelectric spin fieldeffect transistor. Transistors prelude quantum computers use arduino for. The device uses diffusive transport and operates without. Spin transistors and spin hall effects have been two separate leading directions of research in this field. Quantum spin transistor with a heisenberg spin chain. In the second chapter, we look more into details of spin field effect transistor from a device point of view. Spin fieldeffect transistor in a quantum spinhall device.
Quantum spin hall effect and topological field effect transistor in twodimensional transition metal dichalcogenides authors. Two quantum point contacts are used to respectively inject and detect spins by purely electrical means in an allsemiconductor spin transistor. The spin transistor comes about as a result of research on. Called a topological field effect transistor, or tfet, the design is based on a single layer of the 2d material sandwiched by two layers of 2d boron nitride. This transistor consists of two ferromagnetic electrodes, i.
The spin injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. Spin polarized injection of electrons from a twodimensional medium into another the latter possessing strong spin orbit interaction is at the core of a number of spin field effect transistors that operate on the principle of gatetunable spin orbit interaction 1, 2. Using the spin of the electrons in graphene and other layered material heterostructures the. Quantized conductance and fieldeffect topological quantum. Allelectric allsemiconductor spin fieldeffect transistors. Download fulltext pdf quantum dot field effect transistors article pdf available in materials today 169.
This spin field effect transistor sfet is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. Where the gate is cobalt, the resulting magnetic oxide is co 3 o 4 111. The spin fet is composed of ferromagnetic electrodes and an electron. In quantum physicsthe spin orbit interaction also called spin orbit effect or spin orbit coupling is a relativistic interaction of a particles spin with its motion inside a potential. Nonballistic spin fieldeffect transistor john schliemann, j. Digital switch and femtotesla magnetic field sensor based on fano resonance in a spin field effect transistor. Different from earlier proposals, spin transport through our device is tolerant. Control of spin precession in a spininjected field effect.
In this theoretical study, we demonstrate that a junction formed by two superconductors linked by. Request pdf quantum spin field effect transistor we propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of. Pdf complementary spin transistor using a quantum well. Pdf the spin fieldeffecttransistor shreyas shah academia. The spin filtering effect proposed in this paper requires the lateral rashba so interaction i. Spin waves are generated by an oscillating magnetic field ht at. One motivation for this is the desire for miniaturization which led to the realization of singleelectron. What does quantum mechanics have to do with transistors. The rotating magnetic field rotates with the angular frequency. A realization of an allelectric allsemiconductor spinfield effect transistor in which these obstacles are overcome by using two quantum points contact as spin. Simulation of the spin field effect transistors arxiv.
The quantum hall effect or integer quantum hall effect is a quantum mechanical version of the hall effect, observed in twodimensional electron systems subjected to low temperatures and strong magnetic fields, in which the hall conductance. Already in research labs around the world the last generation of bulk cmos is being explored, wrote honsum. The field of semiconductor spintronics explores spin related quantum relativistic phenomena in solidstate systems. Figure 1 illustration of the experiment and scanning electron microscope sem image of the devices. Quantum spin hall effect and topological field effect transistor in twodimensional transition metal dichalcogenides xiaofeng qian1, junwei liu2, liang fu2, and ju li1, 1department of nuclear science and engineering and department of materials science and engineering, massachusetts institute of technology, cambridge, massachusetts 029, usa. It is currently common belief that the dattadas type spin fet can operate only in regime of ballistic. Soi generated by the lateral electric field f 0, f y, 0. A schematic illustration of the spinfet is shown in figure 8. Mosfet, the tunnel elde ect transistor tfet has been proposed. We propose a spin field effect transistor based on spin orbit coupling of both the rashba and the dresselhaus types. A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire fieldeffect transistor.
The pure spin current could be used as information transistors and logic devices. We discuss the transport properties of a quantum spinhall insulator with sizable rashba spinorbit coupling in a disk geometry. We measure the charge stability of the double quantum dot in dc transport as well as dispersively. Fets control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source fets are also known as unipolar transistors since they involve. We investigate mesoscopic spin transport through a quantum dot qd responded by a rotating and an oscillating magnetic fields. Digital switch and femtotesla magnetic field sensor based. Pdf we discuss the transport properties of a quantum spin hall insulator with sizable rashba spin orbit coupling in a disk geometry. Two facetoface topgate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the fewelectron limit. More than two decades later, this research has reached the quantum regime 3. Pdf allelectric allsemiconductor spin fieldeffect transistors. A quantum fieldeffect transistor qfet or quantum well field effect transistor qwfet is a type of mosfet metaloxidesemiconductor field effect transistor that takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistors area of electron conduction which typically causes carriers to slow down by a factor of 3000. Department of physics, the university of hong kong. Coherent spin precession in a rashba effective magnetic field in the channel of a spin field effect transistor and the spin hall effect are the two most compelling topics in this area.
Dispersively detected pauli spinblockade in a silicon. Complementary spin transistor using a quantum well channel. Nonballistic spinfieldeffect transistor john schliemann, j. We not only show that our device has good fet properties such as a high. In the second chapter, we look more into details of spin fieldeffect transistor from a. Silicene is a quantum spin hall insulator, which undergoes a topological phase transition into other insulators by applying external fields. A numerical simulation of spin dependent quantum transport for a spin field effect transistor spinfet is implemented in a widely used simulator nanomos. Spin filtering effect generated by the intersubband spin. We propose to determine topological phase transitions by measuring the density of states and conductance.
This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the sourcedrain and the channel. Developing graphenebased spin field effect transistors. Though quantum transistors are a novelty today, they will be needed once the classical field effect transistor fet can be made no smalleran event even now on engineers radar screens. The spin fieldeffecttransistor by shreyas shah 05d07010 and kshitij. We propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. A graphenebased spin fieldeffect transistor has been used in an operating at room temperature. Antiferromagnetic spin wave fieldeffect transistor. The spin field effect transistor spinfet is a future semiconductor spintronics device promising to deliver a performance superior to that achieved with present transistor technology.
The fieldeffect transistor fet is a type of transistor which uses an electric field to control the flow of current. A numerical simulation of spindependent quantum transport for a spin field effect transistor is implemented in a widely used simulator, nanomos. The conducting channel connecting the two electrodes is a twodimensional electron gas in semiconductor heterojunction with strong spin orbit coupling. Quantum dot field effect transistors sciencedirect. Highly efficient gate controllability of rashba spinorbit interaction. In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n and ptype conventional charge.
Electrically induced 2d halfmetallic antiferromagnets and. Mesoscopic spinflip transport through a quantum dot. The field of spintronics concerns spin charge coupling in metallic systems. This spin field effect transistor sfet is constructed without any magnetic material, but with the help of spin flip mechanism provided by a rotating external magnetic field of uniform. Carlos egues, and daniel loss department of physics and astronomy, university of basel, ch4056 basel, switzerland received 26 november 2002. Table of contents 1 silicon nanowire fieldeffect transistor 2. We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. We investigate transport properties of silicene nanoribbons based on the landauer formalism.
A quantum point contact qpc is a narrow constriction between two wide electrically conducting regions, of a width comparable to the electronic wavelength nano to micrometer. Xiaofeng qian1, junwei liu2, liang fu2, and ju li1, affiliations. A twodimensional spin fieldeffect transistor arxiv. Quantum point contacts were first reported in 1988 by a dutch group van wees et al. Spintronics a portmanteau meaning spin transport electronics, also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solidstate devices.
Single molecules can be coupled to metallic electrodes when the latter are in the superconducting state. They are based on earlier work by the british group which showed how split. Reflection and refraction of an electron spin at the. Quantum transistor harnesses new effect use arduino for.
The researchers say such devices could be produced at very high density on a chip and have very. A numerical simulation of spindependent quantum transport for a spin field effect transistor. Quantum interference in singlemolecule superconducting. Spinfets are composed of two ferromagnetic contacts source and. Quantum spin hall effect and topological field effect. The spin fieldeffect transistor spinfet is a future semiconductor spintronics device promising to deliver a performance superior to that achieved with present transistor technology. Quant um spin hall effect and topological field effect tr.
We have combined the two directions by realizing an allsemiconductor spin hall effect transistor. Pdf spin fieldeffect transistor in a quantum spinhall. In such emerging hybrid molecular devices, the possibility of the josephson effect, that is, the dissipationless transport of cooperpaired electrons from one electrode to the other, arises. New 2d quantum materials for nanoelectronics mit news. In fact, recently, gvozdic and ekenberg 37 pointed out that in the modulationdoped wide or coupled quantum wells, used for the bilayer nanowires fabrication, the large intrinsic f y exists. Other magnetic materials and oxides may be employed. Initially used as a research tool to study charge carrier mobilities in closely packed quantum dot thin films, field effect transistors with quantum dots as the active layer have recently experienced a breakthrough in performance achievement of mobilities higher than 30 cm 2 v. A spin wave field effect transistor and numerical simulation of its performance. We start with an introduction to the concepts of electron spin and proposed spin field effect transistor in the first chapter.
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